![]() To overcome the problems, a protective layer is employed during fabrication of AlN/GaN-based devices. Exposure to any chemical solutions during device processing degrades the surface properties, resulting in poor device performance. Having very thin AlN barrier layer of ∼ 3 nm makes the epilayers very sensitive to liquids coming in contact with the surface. Despite having superior material properties such as higher two-dimensional electron gas (2DEG) densities and larger breakdown field as compared to the conventional aluminium gallium nitride (AlGaN)/GaN HEMTs, the AlN/GaN devices suffer from surface sensitivity, high leakage currents and high Ohmic contact resistances. The ever increasing demand for higher power devices at higher frequencies has prompted much research recently into the aluminium nitride/gallium nitride high electron mobility transistors (AlN/GaN HEMTs) in response to theoretical predictions of higher performance devices. ![]()
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